NUS6189MNTWG datasheet(5/14 Pages) ONSEMI

Part #	NUS6189MNTWG

Description	Low Profile Overvoltage Protection IC with Integrated MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NUS6189MN

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ELECTRICAL CHARACTERISTICS (TJ = 25°C, CNTRL ≤ 1.5 V, VCC = 6.0 V, unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

OVP THRESHOLD

Input Threshold (VIN Increasing)

Vth

6.65

6.85

7.08

V

Input Hysteresis (VIN Decreasing)

Vhyst

50

150

200

mV

Input Impedance (VIN = Vth)

RIN

70

150

–

kW

CONTROL INPUT

Control Voltage High (Output On)

VcntrlHI

1.50

–

V

Control Voltage Low (Output Off)

VcntrlLO

–

0.50

V

Control Current High (Vih = 5.0 V)

Iih

–

95

200

mA

Control Current Low (Vil = 0.5 V)

Iil

–

10

−

mA

OVP GATE DRIVE VOLTAGE

Gate2 Voltage High (VIN = 8.0 V; ISource = 10 mA)

Gate2 Voltage High (VIN = 8.0 V; ISource = 0.25 mA)

Gate2 Voltage High (VIN = 8.0 V; ISource = 0 mA)

Voh

VIN – 1.0

VIN – 0.25

VIN – 0.1

–

V

Gate2 Voltage Low

(VIN = 6.0 V; ISink = 0 mA, Control = 0 V)

Vol

–

0.10

V

Gate2 Sink Current (VIN < VTh, OVPOUT = 1.0 V, Note 5)

ISink

10

33

50

mA

TIMING

Turn on Delay − Input

(VIN stepped down from 8 to 6 V; measured at 50% point of OVPOUT, Note 5)

ton_IN

–

10

ms

Turn off Delay − Input (VIN stepped up from 6.0 to 8.0 V; CL = 12 nF Output >

VIN − 1.0 V)

toff_IN

–

0.5

1.0

ms

Turn on Delay − Control (Control signal stepped down from 2.0 to 0.5 V;

measured to 50% point of OVPOUT, Note 5)

ton_CT

–

10

ms

Turn off Delay − Control (Control signal stepped up from 0.5 to 2.0 V; CL = 12

nF Output > VIN −1.0 V)

toff_CT

–

1.0

2.0

ms

TOTAL DEVICE

VIN Operating Voltage Range (Note 5)

VIN

3.0

4.8

25

V

Input Bias Current

IBias

–

0.75

1.0

mA

Undervoltage Lockout (VIN Decreasing)

VLock

2.5

2.8

3.0

V

OVP FET (MOSFET2) (TJ = 25°C, VCC = 6.0 V, unless otherwise specified)

Voltage Drop (VIN to OVPOUT, VGS = -4.5 V)

ILoad = 0.6 A

ILoad = 1.0 A

ILoad = 1.0 A, TJ = 150°C (Note 5)

VOVP

–

33

66

90

54

100

135

mV

On Resistance

ILoad = 0.6 A

ILoad = 1.0 A

ILoad = 1.0 A, TJ = 150°C (Note 5)

RDS(on)

–

−

50

52

90

100

135

mW

Off State Leakage Current

TJ = 125°C

ILeak

–

-0.1

–

-1.0

-100

mA

CHARGING BJT (TJ = 25°C, unless otherwise specified)

Collector-Emitter Cutoff Current (VCES = -20 V, Note 5)

ICES

–

-0.1

mA

DC Current Gain (IB = -2.0 mA, VCE = -2.0 V, Note 6)

hfe

180

–

Collector-Emitter Saturation Voltage

IC = -1.0 A, IB = -0.01 A

IC = -1.0 A, IB = -0.1 A

VCE(sat)

–

-0.10

-0.069

-0.12

-0.09

V

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