NUS6160MN datasheet(6/13 Pages) ONSEMI

Part #	NUS6160MN

Description	Low Profile Overvoltage Protection IC with Integrated MOSFET

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NUS6160MN

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6

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted, all parameters apply to both FETSW and

FETREG)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(Br)DSS

VGS = 0 V, ID = −250 mA

−20

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(Br)DSS/TJ

−15

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = −16 V

TJ = 25°C

−1.0

mA

TJ = 85°C

−5.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = "8.0 V

"100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.45

−1.5

V

Gate Threshold Temperature Coefficient

VGS(TH)/TJ

2.7

mV/°C

Drain−to−Source On Resistance

RDS(ON)

VGS = −4.5 V, ID = −1.0 A

64

80

mW

VGS = −4.5 V, ID = −0.6 A

62

80

Forward Transconductance

gFS

VDS = −10 V, ID = −2.9 A

7.0

S

CHARGES, CAPACITANCES, AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −16 V

750

pF

Output Capacitance

COSS

100

Reverse Transfer Capacitance

CRSS

45

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −16 V,

ID = −2.6 A

7.6

8.6

nC

Gate−to−Source Charge

QGS

1.3

Gate−to−Drain Charge

QGD

2.6

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −16 V,

ID = −2.6 A, RG = 2.0 W

5.5

ns

Rise Time

tr

12

Turn−Off Delay Time

td(OFF)

32

Fall Time

tf

23

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = −1.1 A

−0.8

−1.2

V

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 1.0 A

20

ns

Charge Time

ta

15

Discharge Time

tb

5

Reverse Recovery Charge

QRR

0.01

mC

2. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2%

3. Switching characteristics are independent of operating junction temperatures

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