NTHD3133PFT3G datasheet(2/7 Pages) ONSEMI

Part #	NTHD3133PFT3G

Description	Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET?

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Manufacturer	ONSEMI [ON Semiconductor]

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NTHD3133PF

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THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Units

Junction-to-Ambient – Steady State (Note 2)

RqJA

113

°C/W

Junction-to-Ambient – t

≤ 10 s (Note 2)

RqJA

60

°C/W

2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = -250 mA

-20

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

-15

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VDS = -16 V,

VGS = 0 V

TJ = 25°C

-1.0

mA

TJ = 125°C

-5.0

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±8.0 V

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250 mA

-0.45

-1.5

V

Gate Threshold Temperature Coefficient

VGS(TH)/TJ

2.7

mV/

°C

Drain-to-Source On-Resistance

RDS(on)

VGS = -4.5, ID = -3.2 A

64

80

m

W

VGS = -2.5, ID = -2.2 A

85

110

VGS = -1.8, ID = -1.0 A

120

170

Forward Transconductance

gFS

VDS = -10 V, ID = -2.9 A

8.0

S

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = -10 V

680

pF

Output Capacitance

COSS

100

Reverse Transfer Capacitance

CRSS

70

Total Gate Charge

QG(TOT)

VGS = -4.5 V, VDS = -10 V,

ID = -3.2 A

7.4

nC

Threshold Gate Charge

QG(TH)

0.6

Gate-to-Source Charge

QGS

1.4

Gate-to-Drain Charge

QGD

2.5

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

td(ON)

VGS = -4.5 V, VDD = -10 V,

ID = -3.2 A, RG = 2.4 W

5.8

ns

Rise Time

tr

11.7

Turn-Off Delay Time

td(OFF)

16

Fall Time

tf

12.4

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = -2.5 A

TJ = 25°C

-0.8

-1.2

V

Reverse Recovery Time

tRR

VGS = 0 V, IS = -1.0 A ,

dIS/dt = 100 A/ms

13.5

ns

Charge Time

ta

9.5

Discharge Time

tb

4.0

Reverse Recovery Charge

QRR

6.5

nC

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Maximum Instantaneous

Forward Voltage

VF

IF = 0.1 A

0.31

V

IF = 1.0 A

0.365

Maximum Instantaneous

Reverse Current

IR

VR = 10 V

0.75

mA

VR = 20 V

2.5

Non-Repetitive Peak Surge Current

IFSM

Halfwave, Single Pulse 60 Hz

23

A

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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