NTGD3148NT1G datasheet(1/5 Pages) ONSEMI

Part #	NTGD3148NT1G

Description	Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6

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Manufacturer	ONSEMI [ON Semiconductor]

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April, 2008 - Rev. 0

1

Publication Order Number:

NTGD3148N/D

NTGD3148N

Power MOSFET

20 V, 3.5 A, Dual N-Channel, TSOP-6

Features

• Low Threshold Levels, VGS(th) < 1.5 V

• Low Gate Charge (3.8 nC)

• Leading Edge Trench Technology of Low RDS(on)

• High Power and Current Handling Capability

• This is a Pb-Free Device

Applications

• DC-DC Converters (Buck and Boost Circuits)

• Low Side Load Switch

• Optimized for Battery and Load Management Applications in

Portable Equipment Like Cell Phones, DSCs, Media Player, Etc

• Battery Charging and Protection Circuits

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

VDSS

20

V

Gate-to-Source Voltage

VGS

±12

V

Continuous Drain

Current (Note 1)

Steady State

TA = 25°C

ID

3.0

A

TA = 85°C

2.2

Continuous Drain

Current (Note 1)

t

≤ 5 s

TA = 25°C

ID

3.5

A

Power Dissipation

(Note 1)

Steady State

TA = 25°C

PD

0.9

W

t

≤ 5 s

1.1

Pulsed Drain Current

tp = 10 ms

IDM

10

A

Operating Junction and Storage Temperature

TJ, TSTG

-50 to

150

°C

Source Current (Body Diode)

IS

0.8

A

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

Unit

Junction-to-Ambient – Steady State (Note 1)

RqJA

140

°C/W

Junction-to-Ambient – t

≤ 5 s (Note 1)

RqJA

110

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

http://onsemi.com

N-CHANNEL MOSFET

20 V

100 m

W @ 2.5 V

70 m

W @ 4.5 V

RDS(on) Max

ID Max

V(BR)DSS

N-CHANNEL MOSFET

3.5 A

DN = Specific Device Code

M

= Date Code

G

= Pb-Free Package

(Note: Microdot may be in either location)

TSOP-6

CASE 318G

STYLE 13

MARKING

DIAGRAM

DN M

G

1

4

(Top View)

PIN CONNECTION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

G

S

D

5

6

3

2

1

D2

S1

D1

G2

S2

G1

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