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CY14E101LA Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY14E101LA
Description  1 Mbit (128K x 8) nvSRAM
Download  19 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY14E101LA Datasheet(HTML) 5 Page - Cypress Semiconductor

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CY14E101LA
Document #: 001-42916 Rev. *B
Page 5 of 19
During any STORE operation, regardless of how it is initiated,
the CY14E101LA continues to drive the HSB pin LOW, releasing
it only when the STORE is complete. Upon completion of the
STORE operation, the CY14E101LA remains disabled until the
HSB pin returns HIGH. Leave the HSB unconnected if it is not
used.
Hardware RECALL (Power Up)
During
power
up
or
after
any
low
power
condition
(VCC<VSWITCH), an internal RECALL request is latched. When
VCC again exceeds the sense voltage of VSWITCH, a RECALL
cycle is automatically initiated and takes tHRECALL to complete.
During this time, HSB is driven low by the HSB driver.
Software STORE
Data is transferred from SRAM to the nonvolatile memory by a
software address sequence. The CY14E101LA Software
STORE cycle is initiated by executing sequential CE controlled
read cycles from six specific address locations in exact order.
During the STORE cycle an erase of the previous nonvolatile
data is first performed, followed by a program of the nonvolatile
elements. After a STORE cycle is initiated, further input and
output are disabled until the cycle is completed.
Because a sequence of READs from specific addresses is used
for STORE initiation, it is important that no other read or write
accesses intervene in the sequence, or the sequence is aborted
and no STORE or RECALL takes place.
To initiate the Software STORE cycle, the following read
sequence must be performed:
1. Read Address 0x4E38 Valid READ
2. Read Address 0xB1C7 Valid READ
3. Read Address 0x83E0 Valid READ
4. Read Address 0x7C1F Valid READ
5. Read Address 0x703F Valid READ
6. Read Address 0x8FC0 Initiate STORE Cycle
The software sequence may be clocked with CE controlled reads
or OE controlled reads, with WE kept HIGH for all the six READ
sequences. After the sixth address in the sequence is entered,
the STORE cycle commences and the chip is disabled. HSB is
driven LOW. After the tSTORE cycle time is fulfilled, the SRAM is
activated again for the read and write operation.
Software RECALL
Data is transferred from nonvolatile memory to the SRAM by a
software address sequence. A Software RECALL cycle is
initiated with a sequence of read operations in a manner similar
to the Software STORE initiation. To initiate the RECALL cycle,
the following sequence of CE controlled read operations must be
performed:
1. Read Address 0x4E38 Valid READ
2. Read Address 0xB1C7 Valid READ
3. Read Address 0x83E0 Valid READ
4. Read Address 0x7C1F Valid READ
5. Read Address 0x703F Valid READ
6. Read Address 0x4C63 Initiate RECALL Cycle
Internally, RECALL is a two step procedure. First, the SRAM data
is cleared. Next, the nonvolatile information is transferred into the
SRAM cells. After the tRECALL cycle time, the SRAM is again
ready for read and write operations. The RECALL operation
does not alter the data in the nonvolatile elements.
Table 2. Mode Selection
CE
WE
OE
A15 - A0
[5]
Mode
I/O
Power
H
X
X
X
Not Selected
Output High Z
Standby
L
H
L
X
Read SRAM
Output Data
Active
L
L
X
X
Write SRAM
Input Data
Active
L
H
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8B45
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore
Disable
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Active[6]
Notes
5. While there are 17 address lines on the CY14E101LA, only the 13 address lines (A14 - A2) are used to control software modes. Rest of the address lines are don’t care.
6. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a nonvolatile cycle.
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