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NTD4858N-1G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NTD4858N-1G
Description  Power MOSFET 25 V, 73 A, Single N-Channel, DPAK/IPAK
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTD4858N-1G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1
Publication Order Number:
NTD4858N/D
NTD4858N
Power MOSFET
25 V, 73 A, Single N-Channel, DPAK/IPAK
Features
Trench Technology
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
Applications
VCORE Applications
DC-DC Converters
High/Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
VDSS
25
V
Gate-to-Source Voltage
VGS
±20
V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°C
ID
14
A
TA = 85°C
10.9
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.0
W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
ID
11.2
A
TA = 85°C
8.7
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
1.3
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
73
A
TC = 85°C
56
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
54.5
W
Pulsed Drain
Current
tp=10ms
TA = 25°C
IDM
146
A
Current Limited by Package
TA = 25°C
IDmaxPkg
45
A
Operating Junction and Storage
Temperature
TJ,
TSTG
-55 to
+175
°C
Source Current (Body Diode)
IS
45
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain-to-Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 15 Apk, L = 1.0 mH, RG = 25 W)
EAS
112.5
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V(BR)DSS
RDS(ON) MAX
ID MAX
25 V
6.2 m
W @ 10 V
73 A
9.3 m
W @ 4.5 V
G
S
N-CHANNEL MOSFET
D
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
Gate
2
Drain 3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
Y
= Year
WW
= Work Week
4858N = Device Code
G
= Pb-Free Package
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
CASE 369D
IPAK
(Straight Lead
DPAK)
1 2
3
4
1
2
3
4
CASE 369AC
3 IPAK
(Straight Lead)
1
2
3
4


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