NTD4855N

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction-to-Case (Drain)

2.25

°C/W

Junction-to-TAB (Drain)

3.5

Junction-to-Ambient – Steady State (Note 1)

67

Junction-to-Ambient – Steady State (Note 2)

111

1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.

2. Surface-mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

25

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

22

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate-to-Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.45

2.5

V

Negative Threshold Temperature

Coefficient

TBD

mV/

°C

Drain-to-Source On Resistance

3.5

4.3

m

W

4.6

6.0

Forward Transconductance

80

S

CHARGES AND CAPACITANCES

Input Capacitance

2950

pF

Output Capacitance

740

Reverse Transfer Capacitance

400

Total Gate Charge

21.8

32.7

nC

Threshold Gate Charge

2.4

Gate-to-Source Charge

7.9

Gate-to-Drain Charge

8.6

Total Gate Charge

44

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

17.75

ns

Rise Time

31.48

Turn-Off Delay Time

20.28

Fall Time

10.74

Turn-On Delay Time

10.01

ns

Rise Time

16.52

Turn-Off Delay Time

32.02

Fall Time

4.35

3. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.