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NTD3808N-35G Datasheet(PDF) 3 Page - ON Semiconductor |
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NTD3808N-35G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 7 page NTD3808N http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Unit Max Typ Min Test Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 15 A TJ = 25°C 0.84 1.0 V TJ = 125°C 0.71 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 15 A 21 ns Charge Time ta 9.9 Discharge Time tb 11.1 Reverse Recovery Charge QRR 8.8 nC PACKAGE PARASITIC VALUES Source Inductance LS TA = 25°C 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK (Note 5) LD 1.88 Gate Inductance LG 3.46 Gate Resistance RG 1.0 W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. 5. Assume standoff of 110 mm ORDERING INFORMATION Device Package Shipping† NTD3808NT4G DPAK (Pb-Free) 2500 / Tape & Reel NTD3808N-1G IPAK (Pb-Free) 75 Units / Rail NTD3808N-35G IPAK Trimmed Lead (3.5 " 0.15 mm) (Pb-Free) 75 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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