NSB13211DW6T1G datasheet(3/4 Pages) ONSEMI

Part #	NSB13211DW6T1G

Description	Dual Complementary Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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NSB13211DW6T1G

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ELECTRICAL CHARACTERISTICS - Q2 (NPN BRT) (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

-

100

nAdc

Collector-Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

-

500

nAdc

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

-

0.5

mAdc

Collector-Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

-

Vdc

Collector-Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

-

Vdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

hFE

35

60

-

Collector-Emitter Saturation Voltage

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

-

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

-

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

-

Vdc

Input Resistor

R1

7.0

10

13

k

W

Resistor Ratio

R1/R2

0.8

1.0

1.2

3. Pulse Test: Pulse Width < 300

ms, Duty Cycle < 2.0%

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