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NP0900SAMCT3G Datasheet(PDF) 3 Page - ON Semiconductor |
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NP0900SAMCT3G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 7 page NP−SAMC Series http://onsemi.com 3 ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted) Symbol Rating Min Typ Max Unit V(BO) Breakover voltage: The maximum voltage across the device in or at the breakdown region. VDC = 1000 V, dv/dt = 100 V/ms NP0640SAMCT3G $77 V NP0720SAMCT3G $88 NP0900SAMCT3G $98 NP1100SAMCT3G $130 NP1300SAMCT3G $160 NP1500SAMCT3G $180 NP1800SAMCT3G $220 NP2100SAMCT3G $240 NP2300SAMCT3G $260 NP2600SAMCT3G $300 NP3100SAMCT3G $350 NP3500SAMCT3G $400 I(BO) Breakover Current: The instantaneous current flowing at the breakover voltage. 800 mA IH Holding Current: The minimum current required to maintain the device in the on−state. 150 mA IDRM Off−state Current: The dc value of current that results from the applica- tion of the off−state voltage VD = 50 V 2 mA VD = VDRM 5 VT On−state Voltage: The voltage across the device in the on−state condition. IT = 2.2 A (pk), PW = 300 ms, DC = 2% 4 V dv/dt Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below VDRM) that will not cause switching from the off−state to the on−state. Linear Ramp between 0.1 VDRM and 0.9 VDRM ±5 kV/ms di/dt Critical rate of rise of on−state current: rated value of the rate of rise of current which the device can withstand without damage. ±500 A/ms CO Off−state Capacitance f = 1.0 MHz, Vd = 1.0 VRMS, VD = −2 Vdc NP0640SAMCT3G 18 pF NP0720SAMCT3G 18 NP0900SAMCT3G 18 NP1100SAMCT3G 18 NP1300SAMCT3G 18 NP1500SAMCT3G 18 NP1800SAMCT3G 18 NP2100SAMCT3G 18 NP2300SAMCT3G 18 NP2600SAMCT3G 18 NP3100SAMCT3G 18 NP3500SAMCT3G 18 THERMAL CHARACTERISTICS Symbol Rating Value Unit TSTG Storage Temperature Range −65 to +150 °C TJ Junction Temperature −40 to +150 °C R0JA Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06” Fan out in a 3x3 inch pattern, 2 oz copper track. 90 °C/W |
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