NDD05N50Z datasheet(4/9 Pages) ONSEMI

Part #	NDD05N50Z

Description	N-Channel Power MOSFET 500 V, 1.25 ?

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Manufacturer	ONSEMI [ON Semiconductor]

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NDF05N50Z, NDP05N50Z, NDD05N50Z

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TYPICAL CHARACTERISTICS

0

100

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0

5

10

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25

30

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45

50

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

TJ = 25°C

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

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0

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200

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300

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source Voltage and

Drain−to−Source Voltage versus Total Charge

QT

QGD

QGS

VDS = 250 V

ID = 5 A

TJ = 25°C

VDS

VGS

1.0

10

100

1000

1

10

100

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

td(off)

tf

tr

td(on)

VDD = 250 V

ID = 5 A

VGS = 10 V

0.1

1.0

10

100

0.3

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0.9

1.0

1.1

1.2

125°C

TJ = 150°C

25°C

−55°C

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

0.01

0.1

1

10

100

0.1

1

10

100

1000

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area NDD05N50Z

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS v 30 V

SINGLE PULSE

TC = 25°C

10 ms

100 ms

10 ms

dc

1 ms

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NDD05N50Z Datasheet(PDF) 4 Page - ON Semiconductor

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