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NCV8614 Datasheet(PDF) 4 Page - ON Semiconductor |
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NCV8614 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 25 page NCV8614 http://onsemi.com 4 MAXIMUM RATINGS (Voltages are with respects to GND unless noted otherwise) Rating Symbol Max Min Unit Maximum DC Voltage VIN−B, VIN−A, ASO_RAIL, VBATT_MON, VIN_S3, EN, IGNIN 40 −0.3 V Peak Transient VIN−B, VIN−A, ASO_RAIL, VBATT_MON, VIN_S3, EN, IGNIN 45 −0.3 V Maximum DC Voltage VIN−H 24 −0.3 V Maximum DC Voltage IGNOUT, VPP, HV_DET, BO_DET, HOT_FLG, RST, DLY, VOUT1, VOUT2 7 −0.3 V Maximum DC Voltage VOUT3 10 −0.3 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL INFORMATION Rating Symbol Min Unit Thermal Characteristic (Note 1) RqJA 40 °C/W Operating Junction Temperature Range TJ −40 to 150 °C Maximum Storage Temperature Range TSTG −55 to +150 °C Moisture Sensitivity Level MSL 1 1. Values based on measurement of NCV8614 assembled on 2−layer 1−oz Cu thickness PCB with Copper Area of more than 645 mm2 with several thermal vias for improved thermal performance. Refer to CIRCUIT DESCRIPTION section for safe operating area. ATTRIBUTES Rating Symbol Min Unit ESD Capability, Human Body Model (Note 2) ESDHB 2 kV ESD Capability, Machine Model (Note 2) ESDMM 200 V ESD Capability, Charged Device Model (Note 2) ESDCDM 1 kV IGNIN ESD Capability, Human Body Model (Note 2) ESDHB_IGNIN 3 kV IGNIN ESD Capability, Machine Model (Note 2) ESDMM_IGNIN 200 V IGNIN ESD Capability (Note 3) ESD_IGNIN 10 kV 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115) ESD Charged Device Model (CDM) tested per EIA/JES D22/C101, Field Induced Charge Model 3. Device tested with external 10 kW series resistance and 1 nF storage capacitor. |
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