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NESG240033 Datasheet(PDF) 2 Page - NEC

Part # NESG240033
Description  NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NESG240033 Datasheet(HTML) 2 Page - NEC

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THERMAL RESISTANCE (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Termal Resistance from Junction to
Ambient
Note
Rthj-a
260
°C/W
Note Mounted on 3.8 cm
× 9.0 cm × 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25
°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Collector Current
IC
40
mA
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
100
nA
Emitter Cut-off Current
IEBO
VEB = 0.4 V, IC = 0 mA
100
nA
DC Current Gain
hFE
Note 1
VCE = 5 V, IC = 15 mA
140
180
260
RF Characteristics
Gain Bandwidth Product
fT
VCE = 5 V, IC = 40 mA, f = 1 GHz
10.5
GHz
Insertion Power Gain
⏐S21e2 VCE = 5 V, IC = 40 mA, f = 1 GHz
9.5
11.5
dB
Noise Figure (1)
NF1
VCE = 5 V, IC = 15 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50
Ω
0.75
1.15
dB
Noise Figure (2)
NF2
VCE = 5 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
0.8
dB
Associated Gain (1)
Ga1
VCE = 5 V, IC = 15 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50
Ω
9.0
11.0
dB
Associated Gain (2)
Ga2
VCE = 5 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
12.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 5 V, IE = 0 mA, f = 1 MHz
0.9
1.1
pF
Maximum Stable Power Gain
MSG
Note 3
VCE = 5 V, IC = 40 mA, f = 1 GHz
11.0
13.0
dB
Gain 1 dB Compression Output
Power
PO (1 dB)
VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
23.5
dBm
Output 3rd Order Intercept Point
OIP3
VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
35.5
dBm
Notes 1. Pulse measurement: PW
≤ 350
μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
3. MSG =
hFE CLASSIFICATION
Rank
FB
Marking
R7A
hFE Value
140 to 260
S21
S12
<R>
<R>
Data Sheet PU10768EJ02V0DS
2
NESG240033


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