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NESG240033 Datasheet(PDF) 2 Page - NEC |
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NESG240033 Datasheet(HTML) 2 Page - NEC |
2 / 8 page THERMAL RESISTANCE (TA = +25 °C) Parameter Symbol Ratings Unit Termal Resistance from Junction to Ambient Note Rthj-a 260 °C/W Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25 °C) Parameter Symbol MIN. TYP. MAX. Unit Collector Current IC − 40 − mA ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 0.4 V, IC = 0 mA − − 100 nA DC Current Gain hFE Note 1 VCE = 5 V, IC = 15 mA 140 180 260 − RF Characteristics Gain Bandwidth Product fT VCE = 5 V, IC = 40 mA, f = 1 GHz − 10.5 − GHz Insertion Power Gain ⏐S21e⏐2 VCE = 5 V, IC = 40 mA, f = 1 GHz 9.5 11.5 − dB Noise Figure (1) NF1 VCE = 5 V, IC = 15 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω − 0.75 1.15 dB Noise Figure (2) NF2 VCE = 5 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 0.8 − dB Associated Gain (1) Ga1 VCE = 5 V, IC = 15 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω 9.0 11.0 − dB Associated Gain (2) Ga2 VCE = 5 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 12.0 − dB Reverse Transfer Capacitance Cre Note 2 VCB = 5 V, IE = 0 mA, f = 1 MHz − 0.9 1.1 pF Maximum Stable Power Gain MSG Note 3 VCE = 5 V, IC = 40 mA, f = 1 GHz 11.0 13.0 − dB Gain 1 dB Compression Output Power PO (1 dB) VCE = 5 V, IC (set) = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 23.5 − dBm Output 3rd Order Intercept Point OIP3 VCE = 5 V, IC (set) = 40 mA, f = 1 GHz, Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt − 35.5 − dBm Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded. 3. MSG = hFE CLASSIFICATION Rank FB Marking R7A hFE Value 140 to 260 S21 S12 <R> <R> Data Sheet PU10768EJ02V0DS 2 NESG240033 |
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