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DE275-101N30A Datasheet(PDF) 1 Page - IXYS Corporation |
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DE275-101N30A Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page  DE275-101N30A RF Power MOSFET VDSS = 100 V ID25 = 30.0 A RDS(on) ≤ 0.06 Ω Ω Ω Ω PDC = 550 W Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 30.0 A IDM Tc = 25°C, pulse width limited by TJM 240 A IAR Tc = 25°C TBD A EAR Tc = 25°C TBD mJ dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5.5 V/ns IS = 0 >200 V/ns PDC 550 W PDHS Tc = 25°C Derate 4.4W/°C above 25°C 270 W PDAMB Tc = 25°C 3.5 W RthJC 0.25 C/W RthJHS 0.53 C/W Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. typ. max. VDSS VGS = 0 V, ID = 3 ma 100 V VGS(th) VDS = VGS, ID = 250 a 2 2.5 4 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C 25 250 µA µA RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 0.06 Ω gfs VDS = 15 V, ID = 0.5ID25, pulse test 9.7 S TJ -55 +175 °C TJM 175 °C Tstg -55 +175 °C TL 1.6mm(0.063 in) from case for 10 s 300 °C Weight 2 g Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced low Qg process • Low gate charge and capacitances − easier to drive − faster switching • Low RDS(on) • Very low insertion inductance (<2nH) • No beryllium oxide (BeO) or other hazardous materials Advantages • Optimized for RF and high speed switching • Easy to mount—no insulators needed • High power density N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching DRAIN SG1 SG2 GATE SD1 SD2 |
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