RJH60F4DPK-00-T0 datasheet(2/7 Pages) RENESAS

Part #	RJH60F4DPK-00-T0

Description	Silicon N Channel IGBT High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJH60F4DPK

Preliminary

REJ03G1835-0100 Rev.1.00 Oct 13, 2009

Page 2 of 6

Electrical Characteristics

(Tj = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector current

ICES

⎯

100

μA

VCE = 600V, VGE = 0

Gate to emitter leak current

IGES

⎯

±1

μA

VGE = ±30 V, VCE = 0

Gate to emitter cutoff voltage

VGE(off)

4

⎯

8

V

VCE = 10V, IC = 1 mA

VCE(sat)

⎯

1.4

1.82

V

IC = 30 A, VGE = 15V

Note3

Collector to emitter saturation voltage

VCE(sat)

⎯

1.7

⎯

V

IC = 60 A, VGE = 15V

Note3

Input capacitance

Cies

⎯

1945

⎯

pF

Output capacitance

Coes

⎯

93

⎯

pF

Reverse transfer capacitance

Cres

⎯

33

⎯

pF

VCE = 25 V

VGE = 0 V

f = 1 MHz

td(on)

⎯

30

⎯

ns

tr

⎯

32

⎯

ns

td(off)

⎯

65

⎯

ns

Switching time

tf

⎯

80

⎯

ns

IC = 30 A, Resistive Load

VCC = 300V

VGE = 15V

Rg = 5

Ω Note3

VECF1

⎯

1.6

2.1

V

IF = 20 A

Note3

C-E diode forward voltage

VECF2

⎯

1.8

⎯

V

IF = 40 A

Note3

C-E diode reverse recovery time

trr

⎯

140

⎯

ns

IF = 20 A

diF/dt = 100 A/μs

Notes: 3. Pulse test

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