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HMF25664F4V-90 Datasheet(PDF) 1 Page - Hanbit Electronics Co.,Ltd |
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HMF25664F4V-90 Datasheet(HTML) 1 Page - Hanbit Electronics Co.,Ltd |
1 / 12 page HANBit HMF25664F4V URL: www.hbe.co.kr HANbit Electronics Co., Ltd. REV.02(August,2002) 1 GENERAL DESCRIPTION The HMF25664F4V is a high-speed flash read only memory (FROM) module containing 262,144 words organized in an x64bit configuration. The module consists of four 256K x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state -machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTL- compatible FEATURES w Access time : 50, 55, 70, 90 and 120ns w High-density 2MByte design w High-reliability, low-power design w Single + 3V ± 0.3V power supply w Easy memory expansion w Hardware reset pin(RESET#) w FR4-PCB design w 120-Pin Designed by 60-Pin Fine Pitch Connector P1,P2 w Minimum 1,000,000 write cycle guarantee per sector w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume OPTIONS MARKING w Timing 50ns access -50 55ns access -55 70ns access -70 90ns access -90 120ns access -120 w Packages 120-pin SMM F FLASH-ROM MODULE 2MByte (256K x 64-Bit) ,120PIN SMM,3.3V Part No. HMF25664F4V |
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