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HMF8M16F8VS Datasheet(PDF) 4 Page - Hanbit Electronics Co.,Ltd

Part # HMF8M16F8VS
Description  FLASH-ROM MODULE 16MByte (8M x 16-Bit) , SMM 80Pin
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Manufacturer  HANBIT [Hanbit Electronics Co.,Ltd]
Direct Link  http://www.hbe.co.kr
Logo HANBIT - Hanbit Electronics Co.,Ltd

HMF8M16F8VS Datasheet(HTML) 4 Page - Hanbit Electronics Co.,Ltd

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HANBit
HMF8M16F8VS
URL: www.hbe.co.kr
HANBit Electronics Co., Ltd.
REV.02(August,2002)
4
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
TYP.
MAX.
UNIT
COMMENTS
Block Erase Time
-
0.7
15
Sec
Excludes 00H programming
prior to erasure
Byte Programming Time
-
9
270
µS
Excludes system-level
overhead
Chip Programming Time
-
18
54
sec
Excludes system-level
overhead
CAPACITANCE
PARAMETER
SYMBOL
PARAMETER
DESCRIPTION
TEST SETUP
MIN.
MAX
UNIT
CIN
Input Capacitance
VIN = 0
10
pF
COUT
Output Capacitance
VOUT = 0
10
pF
CIN2
Control Pin Capacitance
VIN = 0
10
pF
Notes: Test conditions TA = 25
o C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
CL=100pF
-90
-100
-120
JEDEC
STANDARD
DESCRIPTION
Min
Max
Min
Max
Min
Max
UNIT
tAVAV
tRC
Read Cycle Time
90
100
120
ns
tELQV
tCE
Chip Enable to Output Delay
90
100
120
ns
tGLQV
tOE
Chip Enable to Output Delay
35
40
50
ns
tEHQZ
tDF
Chip Enable to Output High-Z
30
30
30
ns
tAXQX
tQH
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
0
0
0
ns
TEST CONDITIONS


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