HANBit

HMF4M32B8VS

HANbit Electronics Co., Ltd.

REV.02(August,2002)

4

5MHZ

16

Vcc Active Read Current

(Note1)

All Outputs open

1MHZ

4

mA

Vcc Active Write Current

(Note 2 and 4)

30

mA

Vcc Standby Current

Vcc=Vcc max ; /CE,Reset=Vcc

±0.3V

5

uA

Vcc Standby Current

During Reset

Vcc=Vcc max ; /Reset=Vcc

±0.3V

5

uA

Automatic Sleep

Mode(Note3)

±0.3V;

±0.3V

5

uA

Input Low Voltage

-0.5

0.8

V

Input High Voltage

0.7xVcc

Vcc+0.3

V

Voltage for Autoselect

and Temporary Unprotect

Vcc=3.3V

11.5

12.5

V

Output Low Voltage

0.4

V

0.85xVcc

V

Output High Voltage

Vcc-0.4

V

Low Vcc Lock-Out

Voltage

1.5

V

Notes :

1.

The Icc current listed includes both the DC operating current ane the frequency dependent component(at 5 MHz).

2.

Icc active while Embedded Erase or Embedded Program is progress.

3.

sleep mode current is 200nA.

4.

Not 100% tested.

ERASE AND PROGRAMMING PERFORMANCE

PARAMETER

TYP

MAX

UNIT

COMMENTS

Block Erase Time

0.7

15

sec

Chip Erase Time

27

sec

Excludes 00h programming prior to

erasure

Byte Programming Time

9

270

us

Word Programming Time

11

330

us

Byte Mode

18

54

sec

Chip Programming Time

Word Mode

12

36

sec

Excludes system level overhead

Notes :

1. 25

2. System-level overhead is defined as the time required to excute the four-bus-cycle command necessary to program

each byte. In the preprogramming step of the internal Erase Routine, all bytes ar e programmed to 00H before erasure.