HANBit

HMF4M32B8VN

URL:www.hbe.co.kr

HANBit Electronics Co., Ltd.

REV.02(August,2002)

4

TRUTH TABLE

MODE

/OE

/CE

/WE

DQ

POWER

STANDBY

X

Vcc

± 0.3

X

HIGH-Z

STANDBY

NOT SELECTED

H

L

H

HIGH-Z

ACTIVE

READ

L

L

H

Dout

ACTIVE

WRITE or ERASE

H

L

L

Din

ACTIVE

NOTE: X means don

’t care

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATING

Voltage with respect to ground all other pins

-0.5V to +0.5V

Voltage with respect to ground Vcc

-0.5V to +4.0V

Storage Temperature

-65oC to +150oC

Operating Temperature

-55Oc to +125oC

w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage t o the device.

This is a stress rating only and functional operation of the device at these or any other conditions above those indicated

in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

PARAMETER

SYMBOL

MIN

TYP.

MAX

Vcc for

±5% device Supply Voltages

3.0V

3.6V

Vcc for

± 10% device Supply Voltages

Vcc

2.7V

3.6V

Ground

0

0

0

DC AND OPERATING CHARACTERISTICS (0oC

≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V )

PARAMETER

TEST CONDITIONS

SYMBOL

MIN

MAX

UNITS

Input Leakage Current

±1.0

µA

Output Leakage Current

Vcc=Vcc max, VOUT= GND to Vcc

±1.0

µA

Output High Voltage

0.85*

VCC

V

Output Low Voltage

0.45

V

Vcc Active Current for Read(1)

72

128

mA

Vcc Active Current for Program

or Erase(2)

160

240

mA

Vcc Standby Current

1.6

40

mA

Low Vcc Lock-Out Voltage

2.3

2.5

V

2. Icc active while embedded algorithm (program or erase) is in progress

3. Maximum Icc current specifications are tested with Vcc=Vcc max