9

4913J–AUDR–10/09

ATR4251

3.9

Transconductance of

Level detector

10/12

(9/11)

20

C

3.10

IP3 at level detector

input

Figure 9-2 on page 13,

1MHz and1,1MHz,

120 dBµV

10 (9)

150

170

dBµV

D

3.11

PIN diode current

generation

d(20 log I

30

dB/V

D

3.12

Output resistance

9 (8)

27

35

45

k

Ω

D

4

FM Amplifier

4.1

Emitter voltage

1 (22)

1.85

1.95

2.05

V

A

4.2

Emitter voltage

T = –40°C to +85°C

1 (22)

1.8

2.0

2.2

V

C

4.3

Supply current limit

19 (20)

37

mA

D

4.4

Maximum output

voltage

V

19 (20)

12

V

pp

D

4.5

Input resistance

f = 100 MHz

2 (23)

R

FMIN

50

Ω

D

4.6

Output resistance

f = 100 MHz

19 (20)

R

FMOUT

50

Ω

D

4.7

f=100MHz

FMOUT/

FMIN

G5

dB

A

4.8

Output noise voltage

f=100MHz,

B = 120 kHz

19 (20)

V

N

–5.1

dBµV

D

4.9

f = 98 + 99 MHz

19 (20)

140

dBµV

C

4.10

6dB

C

4.11

2.8

dB

C

4.12

f = 98 + 99 MHz

148

dBµV

C

5FM AGC

5.1

AGC threshold

f=100MHz

f=900MHz

18 (19)

V

thl,900

81

81

83

85

85

87

dBµV

dBµV

B

B

5.2

AGC1 output voltage

AGC1 active,

5 (24)

V

C

5.3

AGC1 output voltage

AGC1 inactive,

5 (24)

V

AGC

V

V

S

VC

5.4

AGC2 output voltage

AGC2 active,

V

6 (4)

V

C

5.5

AGC2 output voltage

AGC2 inactive,

6 (4)

VC

5.6

Input resistance

18 (19)

17

21

25

k

Ω

D

7.

Electrical Characteristics (Continued)

package.

No.

Parameters

Test Conditions

Pin

Symbol

Min.

Typ.

Max.

Unit

Type*

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

Notes:

1. Leakage current of PIN diode can be adjusted by an external resistor between pin 11 and VS

I

AM sin k

V

AMth

-------------------

µA

mV

rms

-----------------