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US8032DCG Datasheet(PDF) 4 Page - Integrated Device Technology |
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US8032DCG Datasheet(HTML) 4 Page - Integrated Device Technology |
4 / 16 page IDTUS8032 LOW POWER DUAL SPST HI-SPEED USB 2.0 (480MBPS) SWITCH USB SWITCH IDT™ LOW POWER DUAL SPST HI-SPEED USB 2.0 (480MBPS) SWITCH 4 IDTUS8032 REV F 080907 DC Electrical Characteristics Unless stated otherwise, typical values are at 25°C Notes: 1. Measured by the voltage drop between Dn, HSD, Dn pins at the indicated current through the switch. On Resistance is determined by the lower of the voltage on the two ports. 2. Guaranteed by design. AC Electrical Characteristics Unless stated otherwise, typical values are for VCC = 3.3 V at 25°C Note 1: Guaranteed by design. Symbol Parameter Conditions VCC (V) TA = -40°C to +85°C Units Min. Typ. Max. VIK Clamp Diode Voltage IIN = -18 mA 3.0 0 -1.2 V VIH Input Voltage HIGH 3.0 to 3.6 1.3 V 3.6 1.7 VIL Input Voltage LOW 3.0 to 3.6 0.5 V 3.6 0.7 IIN Control Input Leakage VIN = 0V to VCC 3.6 -1.0 1.0 µA IOZ OFF State Leakage 0 < HSD < VCC 3.6 -2.0 2.0 µA IOFF Power OFF Leakage Current (D+, D-) VIN = 0V to 3.6 V VCC = 0V 0-2.0 2.0 µA RON Switch On Resistance 1 VIN = 0.4 V, ION = -8 mA 3.0 3.5 10.0 Ω RON Delta RON 2 VIN = 0.4 V, ION = -8 mA 3.0 0.35 Ω RON Flatness RON Flatness 1 VIN = 0V to 1.0 V, ION = -8 mA 3.0 2.0 Ω ICC Quiescent Supply Current VIN = 0V or VCC, IOUT = 0 3.3 300 µA ICCT Increase in ICC Current per Control voltage and VCC levels VIN = 2.6 V, VCC = 3.6 V 3.6 1 3 mA Symbol Parameter Conditions VCC (V) TA = -40°C to +85°C Units Min. Typ. Max. tON Turn ON Time, OE to output VIN = 0.8 V, RL = 50Ω, CL = 5 pF 3.0 to 3.6 15.0 30.0 ns tOFF Turn OFF Time, OE to output VIN = 0.8 V, RL = 50Ω, CL = 5 pF 3.0 to 3.6 12.0 30.0 ns tPD Propagation Delay 1 RL = 50Ω, CL = 5 pF 3.3 0.25 ns OIRR OFF Isolation (non-adjacent) RT = 50Ω, f = 240 MHz 3.0 to 3.6 -35.0 dB Xtalk Non-adjacent Channel Crosstalk RT = 50Ω, f = 240 MHz 3.0 to 3.6 -55.0 dB BW -3dB Bandwidth RT = 50Ω, CL = 0 pF 3.0 to 3.6 500 MHz RT = 50Ω, CL = 5 pF 450 |
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