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IPB90N06S4-04 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPB90N06S4-04 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics 2) Input capacitance C iss - 7980 10400 pF Output capacitance C oss - 1960 2540 Reverse transfer capacitance Crss - 75 150 Turn-on delay time t d(on) -30 - ns Rise time t r -70 - Turn-off delay time t d(off) -40 - Fall time t f -5 - Gate Charge Characteristics 2) Gate to source charge Q gs -44 57 nC Gate to drain charge Q gd -10 20 Gate charge total Q g - 99 128 Gate plateau voltage V plateau - 5.4 - V Reverse Diode Diode continous forward current 2) I S - - 90 A Diode pulse current 2) I S,pulse - - 360 Diode forward voltage V SD V GS=0V, I F=90A, T j=25°C 0.6 0.95 1.3 V Reverse recovery time 2) t rr V R=30V, I F=50A, di F/dt =100A/µs - 125 - ns Reverse recovery charge 2) Q rr - 110 - nC T C=25°C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=30V, V GS=10V, I D=90A, R G=3.5Ω V DD=48V, I D=90A, V GS=0 to 10V 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 1.0K/W the chip is able to carry 152A at 25°C. Rev. 1.2 page 3 2009-07-01 |
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