IPB90N06S4-04 datasheet(3/9 Pages) INFINEON

Part #	IPB90N06S4-04

Description	OptiMOS-T2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 9 page

IPB90N06S4-04

IPI90N06S4-04, IPP90N06S4-04

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

7980

10400 pF

Output capacitance

C oss

-

1960

2540

Reverse transfer capacitance

Crss

-

75

150

Turn-on delay time

t d(on)

-30

-

ns

Rise time

t r

-70

-

Turn-off delay time

t d(off)

-40

-

Fall time

t f

-5

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-44

57

nC

Gate to drain charge

Q gd

-10

20

Gate charge total

Q g

-

99

128

Gate plateau voltage

V plateau

-

5.4

-

V

Reverse Diode

Diode continous forward current

2)

I S

-

90

A

Diode pulse current

2)

I S,pulse

-

360

Diode forward voltage

V SD

V GS=0V, I F=90A,

T j=25°C

0.6

0.95

1.3

V

Reverse recovery time

2)

t rr

V R=30V, I F=50A,

di F/dt =100A/µs

-

125

-

ns

Reverse recovery charge

2)

Q rr

-

110

-

nC

T C=25°C

Values

V GS=0 V, V DS=25 V,

f =1 MHz

V DD=30V, V GS=10V,

I D=90A, R G=3.5Ω

V DD=48V, I D=90A,

V GS=0 to 10V

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 1.0K/W the chip is able to carry 152A at 25°C.

Rev. 1.2

page 3

2009-07-01

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IPB90N06S4-04 Datasheet(PDF) 3 Page - Infineon Technologies AG

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