IPP80P03P4L-04 datasheet(1/9 Pages) INFINEON

Part #	IPP80P03P4L-04

Description	OptiMOS-P2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB80P03P4L-04

IPI80P03P4L-04, IPP80P03P4L-04

OptiMOS®-P2 Power-Transistor

Features

• P-channel - Logic Level - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

• Intended for reverse battery protection

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Unit

Continuous drain current

1)

I D

T C=25°C,

V GS=-10V

-80

A

T C=100°C,

V GS=-10V

2)

-80

Pulsed drain current

2)

I D,pulse

T C=25°C

-320

Avalanche energy, single pulse

E AS

I D=-40A

410

mJ

Avalanche current, single pulse

I AS

-

-80

A

Gate source voltage

V GS

-

+5/-16

V

Power dissipation

P tot

T C=25 °C

137

W

Operating and storage temperature

T j, T stg -

-55 ... +175

°C

IEC climatic category; DIN IEC 68-1

-

55/175/56

Value

V DS

-30

V

R DS(on) (SMD Version)

4.1

m

Ω

I D

-80

A

Product Summary

Type

Package

Marking

IPB80P03P4L-04

PG-TO263-3-2

4P03L04

IPI80P03P4L-04

PG-TO262-3-1

4P03L04

IPP80P03P4L-04

PG-TO220-3-1

4P03L04

PG-TO220-3-1

PG-TO262-3-1

PG-TO263-3-2

Rev. 1.0

page 1

2008-07-29

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IPP80P03P4L-04 Datasheet(PDF) 1 Page - Infineon Technologies AG

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