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IKCS08F60B2C Datasheet(PDF) 10 Page - Infineon Technologies AG |
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IKCS08F60B2C Datasheet(HTML) 10 Page - Infineon Technologies AG |
10 / 19 page CIPOS™ IKCS08F60B2A IKCS08F60B2C Data Sheet 10/19 Rev. 2, March 2009 Static Characteristics (Tc = 25°C, VDD = 15V, if not stated otherwise) Value Description Condition Symbol min typ max Unit Collector-Emitter breakdown voltage VIN = 5V, IC = 0.25mA V(BR)CES 600 V Collector-Emitter saturation voltage VDD = 15V, Iout = +/- 4A TvJ = 25°C TvJ = 150°C VCE(sat) - - 1.6 1.8 2.1 V Diode forward voltage VIN = 5V, Iout = +/- 4A TvJ = 25°C TvJ = 150°C VF - - 1.75 1.7 2.05 V Zero gate voltage collector current of IGBT VCE = 600V, VIN = 5V TvJ = 25°C TvJ = 150°C ICES - - - - 40 1000 µA Short circuit collector current 1 VDD = 15V, tSC ≤ 5µs VCC =400V, TvJ =150°C IC(SC) 2 - 21 - A Logic "0" input voltage (LIN,HIN) VIH 1.7 2.1 2.4 V Logic "1" input voltage (LIN,HIN) VIL 0.7 0.9 1.1 V ITRIP positive going threshold VIT,TH+ 360 460 540 mV ITRIP input hysteresis VIT,HYS 45 75 - mV VDD and VBS supply undervoltage positive going threshold VDDUV+ VBSUV+ 2 11.0 12.1 12.8 V VDD and VBS supply undervoltage negative going threshold VDDUV- VBSUV- 2 9.5 10.4 11.0 V VCC and VBS supply undervoltage lockout hysteresis VDDUVH VBSUVH 2 1.2 1.7 - V Input clamp voltage (/HIN, /LIN) IIN = 4mA VINCLAMP - 10.4 13 V Input clamp voltage (ITRIP) IIN = 4mA VINCLAMP2 - 10.6 13 V Quiescent VBx supply current (VBx only) VHIN = low IQB - 300 550 µA Quiescent VDD supply current (VDD only) VIN = float IQDD - 2.4 3.4 mA Input bias current VIN = 5V IIN+ - 55 100 µA Input bias current VIN = 0V IIN- - 220 400 µA ITRIP Input bias current VITRIP = 5V IITRIP+ - 75 120 µA Leakage current of high side Tj,IC = 125°C ILVS 2 - 30 - µA FAULT low on resistance of the pull down transistors VFLT = 0.5V, VITRIP = 1V Ron,FLT - 56 - Ω 1 Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Test is not subject of product test, verified by characterisation |
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