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IPD90N06S4-04 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IPD90N06S4-04 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page IPD90N06S4-04 OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current 1) I D T C=25°C, V GS=10V 90 A T C=100°C, V GS=10V 2) 90 Pulsed drain current 2) I D,pulse T C=25°C 360 Avalanche energy, single pulse 2) E AS I D=45A 331 mJ Avalanche current, single pulse I AS - 90 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 150 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Value V DS 60 V R DS(on),max 3.8 m Ω I D 90 A Product Summary Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 PG-TO252-3-11 Rev. 1.2 page 1 2009-07-01 |
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