IPD30N06S4L-23 datasheet(3/9 Pages) INFINEON

Part #	IPD30N06S4L-23

Description	OptiMOS-T2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD30N06S4L-23

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

1)

Input capacitance

C iss

-

1200

1560

pF

Output capacitance

C oss

-

325

420

Reverse transfer capacitance

Crss

-18

36

Turn-on delay time

t d(on)

-4

-

ns

Rise time

t r

-1

-

Turn-off delay time

t d(off)

-15

-

Fall time

t f

-3

-

Gate Charge Characteristics

1)

Gate to source charge

Q gs

-

4.9

6.4

nC

Gate to drain charge

Q gd

-

2.1

4.2

Gate charge total

Q g

-

16.1

21

Gate plateau voltage

V plateau

-

4.1

-

V

Reverse Diode

Diode continous forward current

1)

I S

-

30

A

Diode pulse current

1)

I S,pulse

-

120

Diode forward voltage

V SD

V GS=0V, I F=30A,

T j=25°C

0.6

0.95

1.3

V

Reverse recovery time

1)

t rr

V R=30V, I F=I S,

di F/dt =100A/µs

-10

-

ns

Reverse recovery charge

1)

Q rr

-10

-

nC

1) Specified by design. Not subject to production test.

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

T C=25°C

Values

V GS=0V, V DS=25V,

f =1MHz

V DD=30V, V GS=10V,

I D=30A, R G=3.5Ω

V DD=48V, I D=30A,

V GS=0 to 10V

Rev. 1.0

page 3

2009-03-23

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