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IPD30N06S4L-23 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPD30N06S4L-23 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page IPD30N06S4L-23 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics 1) Input capacitance C iss - 1200 1560 pF Output capacitance C oss - 325 420 Reverse transfer capacitance Crss -18 36 Turn-on delay time t d(on) -4 - ns Rise time t r -1 - Turn-off delay time t d(off) -15 - Fall time t f -3 - Gate Charge Characteristics 1) Gate to source charge Q gs - 4.9 6.4 nC Gate to drain charge Q gd - 2.1 4.2 Gate charge total Q g - 16.1 21 Gate plateau voltage V plateau - 4.1 - V Reverse Diode Diode continous forward current 1) I S - - 30 A Diode pulse current 1) I S,pulse - - 120 Diode forward voltage V SD V GS=0V, I F=30A, T j=25°C 0.6 0.95 1.3 V Reverse recovery time 1) t rr V R=30V, I F=I S, di F/dt =100A/µs -10 - ns Reverse recovery charge 1) Q rr -10 - nC 1) Specified by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. T C=25°C Values V GS=0V, V DS=25V, f =1MHz V DD=30V, V GS=10V, I D=30A, R G=3.5Ω V DD=48V, I D=30A, V GS=0 to 10V Rev. 1.0 page 3 2009-03-23 |
Similar Part No. - IPD30N06S4L-23 |
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Similar Description - IPD30N06S4L-23 |
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