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ICE3B0365JG Datasheet(PDF) 10 Page - Infineon Technologies AG |
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ICE3B0365JG Datasheet(HTML) 10 Page - Infineon Technologies AG |
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10 / 22 page  CoolSET™-F3 ICE3B0365JG/ICE3B0565JG Version 2.0 10 14 Nov 2006 3.5 Current Limiting Figure 8 Current Limiting There is a cycle by cycle Current Limiting realized by the Current-Limit comparator C10 to provide an overcurrent detection. The source current of the integrated Depl. CoolMOS™ is sensed via an external sense resistor RSense . By means of RSense the source current is transformed to a sense voltage VSense which is fed into the pin CS. If the voltage VSense exceeds the internal threshold voltage Vcsth the comparator C10 immediately turns off the gate drive by resetting the PWM Latch FF1. A Propagation Delay Compensation is added to support the immediate shut down without delay of the integrated internal CoolMOS™ in case of Current Limiting. The influence of the AC input voltage on the maximum output power can thereby be avoided. To prevent the Current Limiting from distortions caused by leading edge spikes a Leading Edge Blanking is integrated in the current sense path for the comparators C10, C12 and the PWM-OP. The output of comparator C12 is activated by the Gate G10 if Active Burst Mode is entered. Once activated the current limiting is thereby reduced to 0.32V. This voltage level determines the power level when the Active Burst Mode is left if there is a higher power demand. 3.5.1 Leading Edge Blanking Figure 9 Leading Edge Blanking Each time when the integrated internal CoolMOS™ is switched on a leading edge spike is generated due to the primary-side capacitances and secondary-side rectifier reverse recovery time. This spike can cause the gate drive to switch off unintentionally. To avoid a premature termination of the switching pulse, this spike is blanked out with a time constant of tLEB = 220ns. During this time, the gate drive will not be switched off. 3.5.2 Propagation Delay Compensation In case of overcurrent detection, the switch-off of the integrated internal CoolMOS™ is delayed due to the propagation delay of the circuit. This delay causes an overshoot of the peak current Ipeak which depends on the ratio of dI/dt of the peak current (see Figure 10). Figure 10 Current Limiting The overshoot of Signal2 is bigger than of Signal1 due to the steeper rising waveform. This change in the slope is depending on the AC input voltage. Propagation Delay Compensation is integrated to limit the overshoot dependency on dI/dt of the rising primary current. That means the propagation delay time between exceeding the current sense threshold Vcsth and the switch off of the integrated internal CoolMOS™ is compensated over temperature within a wide range. Current Limiting C10 C12 & 0.32V G10 Propagation-Delay Compensation V csth Active Burst Mode PWM Latch FF1 10k Ω D1 1pF PWM-OP CS Leading Edge Blanking 220ns t V Sense V csth t LEB = 220ns t I Sense I Limit t Propagation Delay I Overshoot1 I peak1 Signal1 Signal2 I Overshoot2 I peak2 |
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