NJW3281G datasheet(3/7 Pages) ONSEMI

Part #	NJW3281G

Description	Complementary NPN-PNP Silicon Power Bipolar Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NJW3281G (NPN) NJW1302G (PNP)

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TYPICAL CHARACTERISTICS

IC, COLLECTOR CURRENT (A)

Figure 1. Typical Current Gain

Bandwidth Product

Figure 2. Typical Current Gain

Bandwidth Product

PNP NJW1302G

NPN NJW3281G

IC, COLLECTOR CURRENT (A)

0

10

20

30

40

50

60

0.1

1

10

VCE = 10 V

TJ = 25°C

ftest = 1 MHz

5 V

0

20

40

60

80

0.1

1

10

VCE = 10 V

5 V

TJ = 25°C

ftest = 1 MHz

10

100

1000

0.01

0.1

1

10

100

125

°C

25

°C

-30

°C

VCE = 5 V

IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain

10

100

1000

0.1

1

10

100

IC, COLLECTOR CURRENT (A)

Figure 4. DC Current Gain

VCE = 5 V

125

°C

25

°C

-30

°C

10

100

1000

0.01

0.1

1

10

100

IC, COLLECTOR CURRENT (A)

Figure 5. DC Current Gain

125

°C

25

°C

-30

°C

VCE = 20 V

10

100

1000

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 6. DC Current Gain

VCE = 20 V

125

°C

25

°C

-30

°C

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