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CSD16408Q5 Datasheet(PDF) 5 Page - Texas Instruments |
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CSD16408Q5 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 10 page TC − Case Temperature − °C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 −75 −25 25 75 125 175 G007 ID = 20A VGS = 10V 0.0 0.2 0.4 0.6 0.8 1.0 VSD − Source to Drain Voltage − V G008 TC = 125°C TC = 25°C 100 1 0.01 0.0001 0.001 0.1 10 V -DraintoSourceVoltage-V DS G009 1k 10 0.01 1 100 0.1 0.01 0.1 10 100 1 1ms 10ms 100ms DC 1s SinglePulse AreaLimited byRDS(on) TypicalR =100 C/W(minCu) q JA o t(AV) − Time in Avalanche − ms G010 1k 10 1 100 0.001 0.01 1 100 0.1 TC = 25°C TC = 125°C 10 TC − Case Temperature − °C 0 20 40 60 80 100 120 −50 −25 0 25 50 75 100 125 150 175 G011 CSD16408Q5 www.ti.com SLPS228 – OCTOBER 2009 TYPICAL MOSFET CHARACTERISTICS (continued) TA = 25°C unless otherwise stated Figure 8. Normalized On-State Resistance vs. Temperature Figure 9. Typical Diode Forward Voltage Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs. Temperature Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 5 |
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