CSD16408Q5 datasheet(5/10 Pages) TI

Part #	CSD16408Q5

Description	N-Channel NexFET Power MOSFET

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Manufacturer	TI [Texas Instruments]

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TC − Case Temperature − °C

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

−75

−25

25

75

125

175

G007

ID = 20A

VGS = 10V

0.0

0.2

0.4

0.6

0.8

1.0

VSD − Source to Drain Voltage − V

G008

TC = 125°C

TC = 25°C

100

1

0.01

0.0001

0.001

0.1

10

V

-DraintoSourceVoltage-V

DS

G009

1k

10

0.01

1

100

0.1

0.01

0.1

10

100

1

1ms

10ms

100ms

DC

1s

SinglePulse

AreaLimited

byRDS(on)

TypicalR

=100 C/W(minCu)

q

JA

o

t(AV) − Time in Avalanche − ms

G010

1k

10

1

100

0.001

0.01

1

100

0.1

TC = 25°C

TC = 125°C

10

TC − Case Temperature − °C

0

20

40

60

80

100

120

−50

−25

0

25

50

75

100

125

150

175

G011

CSD16408Q5

www.ti.com

SLPS228 – OCTOBER 2009

TYPICAL MOSFET CHARACTERISTICS (continued)

TA = 25°C unless otherwise stated

Figure 8. Normalized On-State Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs. Temperature

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