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CMT05N50 Datasheet(PDF) 1 Page - Champion Microelectronic Corp. |
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CMT05N50 Datasheet(HTML) 1 Page - Champion Microelectronic Corp. |
1 / 5 page CMT05N50 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. Higher Current Rating Lower rDS(ON), Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View 1 23 D S G N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT05N50N220 TO-220 CMT05N50N220FP TO-220FP ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current - Continuous - Pulsed (Note 1) ID IDM 5.0 18 A Gate-to-Source Voltage - Continue VGS ±20 V Total Power Dissipation Derate above 25℃ PD 96 0.77 W W/℃ Single Pulse Avalanche Energy (Note 2) EAS 125 mJ Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Thermal Resistance - Junction to Case - Junction to Ambient θJC θJA 1.70 62 ℃ /W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 ℃ 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 1 |
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Similar Description - CMT05N50_06 |
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