2 of 10
EDS-101993 Rev L
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CGA-6618(Z)
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)240
mA
Max Device Voltage (VD)7
V
Max RF Input Power
+20
dBm
Max Junction Temp (TJ)+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Max Storage Temp
+150
°C
Min Storage Temp
-65
°
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Worst Case Over Band, CSO
81
dBc
79 Ch., Flat, +34dBmV
Worst Case Over Band, CTB
70
dBc
79 Ch., Flat, +34dBmV
Worst Case Over Band, XMOD
63
dBc
79 Ch., Flat, +34dBmV
Device Operating Voltage
4.8
5.1
5.4
V
Device Operating Current
144
160
176
mA
Thermal Resistance
35
°C/W
(Junction to Lead)
Test Conditions: VS=8V, ID=160mA Typ., RBIAS=33Ω, TL=25°C, ZS=ZL=75Ω, Push Pull Application Circuit
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Gain vs. Frequency
10
11
12
13
14
15
16
17
18
0
100
200
300
400
500
600
700
800
900
1000
Frequency (MHz)
-40C
+25C
+85C
Typical RF Performance: V
S=8V, ID=160mA @ TL=+25°C, RBIAS=33 Ohms, Push-Pull Config.
|S11| (dB) vs. Frequency
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0
100
200
300
400
500
600
700
800
900
1000
Frequency (MHz)
-40C
+25C
+85C
|S22| (dB) vs. Frequency
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0
100
200
300
400
500
600
700
800
900
1000
Frequency (MHz)
-40C
+25C
+85C
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