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IS61DDB44M18-300M3 Datasheet(PDF) 11 Page - Integrated Silicon Solution, Inc

Part # IS61DDB44M18-300M3
Description  72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 4) CIO Synchronous SRAMs
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61DDB44M18-300M3 Datasheet(HTML) 11 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc.
11
Rev. A
05/14/09
72 Mb (2M x 36 & 4M x 18)
DDR-II (Burst of 4) CIO Synchronous SRAMs
Absolute Maximum Ratings
Item
Symbol
Rating
Units
Power supply voltage
VDD
-0.5 to 2.
9
V
Output power supply voltage
VDDQ
-0.5 to 2.
9
V
Input voltage
VIN
-0.5 to
VDD+0.3
V
Data out voltage
VDOUT
-0.5 to 2.6
V
Operating temperature
TA
0 to 70
° C
Junction temperature
TJ
110
° C
Storage temperature
TSTG
-55 to +125
° C
Note: Stresses greater than those listed in this table can cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions above those indicated in the operational sections of this datasheet is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


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