CY7C199D
Document #: 38-05471 Rev. *E
Page 11 of 12
Document History Page
Document Title: CY7C199D 256K (32K x 8) Static RAM
Document Number: 38-05471
Revision
ECN
Orig. of
Change
Submission
Date
Description of Change
**
201560
SWI
See ECN
Advance Information datasheet for C9 IPP
*A
233728
RKF
See ECN
DC parameters modified as per EROS (Spec # 01-02165)
Pb-free Offering in Ordering Information
*B
262950
RKF
See ECN
Removed 28-LCC Pinout and Package Diagrams
Added Data Retention Characteristics table
Added Tpower Spec in Switching Characteristics table
Shaded Ordering Information
*C
307594
RKF
See ECN
Reduced Speed bins to -10, -12 and -15 ns
*D
820660
VKN
See ECN
Converted from Preliminary to Final
Removed 12 ns and 15 ns speed bin
Removed Commercial Operating range
Removed “L” part
Removed 28-pin PDIP and 28-pin SOIC package
Changed Overshoot spec from VCC+2V to VCC+1V in footnote #2
Changed ICC spec from 60 mA to 80 mA for 100 MHz speed bin
Added ICC specs for 83 MHz, 66 MHz and 40 MHz speed bins
Updated Thermal Resistance table
Updated Ordering Information Table
*E
2745093
VKN
See ECN
Included 28-Pin SOIC package
Changed VIH level from 2.0V to 2.2V
For Industrial grade, changed tSD from 5 ns to 6 ns, and tHZWE from 6 ns to 5 ns
Included Automotive-E information
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