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IS45S16100E-7BLA2 Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc

Part # IS45S16100E-7BLA2
Description  512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS45S16100E-7BLA2 Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com 5
Rev. D
08/24/09
IS42S16100E, IS45S16100E
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VDD max
MaximumSupplyVoltage
–1.0to+4.6 V
VDDq max
MaximumSupplyVoltageforOutputBuffer
–1.0to+4.6 V
ViN
InputVoltage
–1.0to+4.6 V
Vout
OutputVoltage
–1.0to+4.6 V
PD max
AllowablePowerDissipation
1
W
Ics
outputShortedCurrent
50
mA
Topr
operatingTemperature
Commerical
0to+70
°C
Industrial
-40to+85 °C
A1
-40to+85 °C
A2
-40to+105 °C
Tstg
StorageTemperature
–55to+150 °C
DC RECOMMENDED OPERATING CONDITION(2)
(AtTa = 0oC to +70oCforCommercialtemperature,Ta = -40oCto+85oCforIndustrialandA1temperature,Ta = -40oC to
+105oC for A2 temperature)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD, VDDq
SupplyVoltage
3.0
3.3
3.6
V
Vih
InputHighVoltage(3)
2.0
—
VDD +0.3
V
Vil
InputLowVoltage(4)
-0.3
—
+0.8
V
CAPACITANCE CHARACTERISTICS(1,2) (AtTa=0to+25°C,VDD=VDDQ=3.3±0.3V,f=1MHz)
Symbol
Parameter
Typ.
Max.
Unit
CiN1
InputCapacitance:A0-A11
—
4
pF
CiN2
InputCapacitance:(CLK,CKE, CS, RAS, CAS, WE,LDQM,UDQM)
—
4
pF
CI/O
DataInput/OutputCapacitance:DQ0-DQ15
—
5
pF
Notes:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.Thisisa
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectreli-
ability.
2.AllvoltagesarereferencedtoGND.
3.Vih(max)=VDDq+1.2Vwithapulsewidth≤ 3 ns.
4.Vil(min)=VDDq-1.2Vwithapulsewidth≤ 3 ns.


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