IS42S83200C-7TL datasheet(5/40 Pages) ISSI

Part #	IS42S83200C-7TL

Description	256 Mb Single Data Rate Synchronous DRAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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Integrated Silicon Solution, Inc. — www.issi.com

5

Rev. C

04/02/09

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Voltage on any pin relative to Vss

VIN,VOUT

-0.5 ~ 4.6

V

Voltage on VDD supply relative to Vss

VDD, VDDQ

-0.5 ~ 4.6

V

Storage temperature

TSTG

-65 ~ +150

±C

Power dissipation

PD

1.0

W

Short circuit current

IOS

50

mA

NOTES:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to VSS = 0V, Commerical grade:TA = 0 to 70 –––

–C, Industrial grade:TA = -40 to 85

oC)

Parameter

Symbol

Min

Typ

Max

Unit

Note

Vdd

3.0

3.3

3.6

V

Supply voltage

VddQ

3.0

3.3

3.6

V

Input logic high voltage

VIH

2.0

VDDQ + 0.3

V

1

Input logic low voltage

VIL

-0.3

0

0.8

V

2

Output logic high voltage

VOH

2.4

-

V

IOH = -0.1mA

Output logic low voltage

VOL

-

0.4

V

IOL = 0.1mA

Input leakage current

ILI

-5

-

5

uA

3

Output leakage current

IoL

-5

-

5

uA

3

Note:

1. VIH(max) = VDDQ + 2V AC for pulse width 3ns acceptable.

2. VIL(min) = -2V AC for pulse width 3ns acceptable.

3. Any input 0V VIN VDD + 0.3V, all other pins are not under test = 0V.

4. Dout is disabled , 0V VOUT VDD.

CAPACITANCE ( Vdd =3.3V, TA= 25°C, f = 1MHz …

Parameter

Symbol

Min

Max

Unit

Note

Clock

Cclk

2.5

4.0

pF

/CAS,/RAS,/WE,/CS,CKE,L/UDQM

Cin

2.5

5.0

pF

Address

CADD

2.5

5.0

pF

DQ0~DQ15

COUT

4.0

6.5

pF

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