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SE97 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # SE97
Description  DDR memory module temp sensor with integrated SPD, 3.3 V
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

SE97 Datasheet(HTML) 2 Page - NXP Semiconductors

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SE97_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 August 2009
2 of 53
NXP Semiconductors
SE97
DDR memory module temp sensor with integrated SPD, 3.3 V
The SE97 has a single die for both the temp sensor and EEPROM for higher reliability and
supports the industry-standard 2-wire I2C-bus/SMBus serial interface. The SMBus
TIMEOUT function is supported to prevent system lock-ups. Manufacturer and Device ID
registers provide the ability to confirm the identity of the device. Three address pins allow
up to eight devices to be controlled on a single bus.
2.
Features
2.1 General features
I JEDEC (JC-42.4) TSE 2002B3 DIMM ± 0.5 °C (typ.) between 75 °C and 95 °C
temperature sensor plus 256-byte serial EEPROM for Serial Presence Detect (SPD)
I Optimized for voltage range: 3.0 V to 3.6 V, but SPD can be read down to 1.7 V
I Shutdown current: 0.1 µA (typ.) and 5.0 µA (max.)
I 2-wire interface: I2C-bus/SMBus compatible, 0 Hz to 400 kHz
I SMBus ALERT Response Address and TIMEOUT (programmable)
I ESD protection exceeds 2500 V HBM per JESD22-A114, 250 V MM per
JESD22-A115, and 1000 V CDM per JESD22-C101
I Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 mA
I Available packages: TSSOP8, HVSON8, HXSON8, HWSON8 (JEDEC PSON8
VCED-3)
2.2 Temperature sensor features
I 11-bit ADC Temperature-to-Digital converter with 0.125 °C resolution
I Operating current: 250 µA (typ.) and 400 µA (max.)
I Programmable hysteresis threshold: off, 0 °C, 1.5 °C, 3 °C, 6 °C
I Over/under/critical temperature EVENT output
I B grade accuracy:
N ±0.5 °C/±1 °C (typ./max.) → +75 °C to +95 °C
N ±1.0 °C/±2 °C (typ./max.) → +40 °C to +125 °C
N ±2.0 °C/±3 °C (typ./max.) →−40 °C to +125 °C
2.3 Serial EEPROM features
I Operating current:
N Write → 0.6 mA (typ.) for 3.5 ms (typ.)
N Read → 100 µA (typ.)
I Organized as 1 block of 256 bytes [(256 × 8) bits]
I 100,000 write/erase cycles and 10 years of data retention
I Permanent and Reversible Software Write Protect
I Software Write Protection for the lower 128 bytes


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