SSF8521 datasheet(1/5 Pages) SILIKRON

Part #	SSF8521

Description	DC-DC conversion applications

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Manufacturer	SILIKRON [Silikron Semiconductor Co.,LTD.]

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SSF8521

©Silikron Semiconductor CO.,LTD

2008.12.1

Version : 1.1

page 1 of 5

A Good-Ark Company

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

8521

SSF8521

DFN3X2-8L

－

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter

Symbol

MOSFET

Schottky

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±8

V

ID

-4.4

A

Drain Current-Continuous@ Current-Pulsed (Note 1)

IDM

-13

A

Schottky reverse voltage

VR

20

V

Continuous Forward Current

IF

4.1

A

Maximum Power Dissipation

PD

2.1

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

THERMAL CHARACTERISTICS

DESCRIPTION

The SSF8521 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge . A

Schottky diode is provided to facilitate the

implementation of a bidirectional blocking switch,

or for DC-DC conversion applications.

Schematic diagram

GENERAL FEATURES

●

MOSFET

= -20V,I

VDS

D = -4.4A

< 170mΩ @ V

RDS(ON)

GS=-1.8V

R

< 110mΩ @ V

DS(ON)

GS=-2.5V

< 80mΩ @ V

RDS(ON)

GS=-4.5V

SCHOTTKY

VR = 20V, IF = 4.1A, VF<0.575V @ 1.0A

Marking and pin Assignment

●

High Power and current handing capability

●

Lead free product is acquired

●

Surface Mount Package

Application

●

DC-DC conversion applications

●

Load switch

DFN3X2-8L Bottom View

●

Power management

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