PZT159 datasheet(2/4 Pages) WEITRON

Part #	PZT159

Description	PNP Silicon Planar High Current Transistor

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Manufacturer	WEITRON [Weitron Technology]

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ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

VCE=-1V, IC=-10mA

VCE=-1V, IC=-2A

VCE=-1V, IC=-5A

VCE=-1V, IC=-10A

VCE=-1V, IC=-5A

Collector-Emitter Saturation Voltage

IC=-100mA, IB=-10mA

IC=-1A, IB=-100mA

IC=-2A, IB=-200mA

IC=-5A, IB=-500mA

Base-Emitter Saturation Voltage

IC=-5A, IB=-500mA

Base-Emitter On Voltage

Transition Frequency

VCE=-10V, IC=-100mA, f=50MHz

Output Capacitance

VCB=-10V, IE=0, f=1MHz

hFE1

hFE2

hFE3

hFE4

100

75

10

200

90

25

-

300

-

VCE(sat)

VBE(sat)

VBE(on)

-

-20

-85

-155

-370

-50

-140

-210

-460

mV

-

-1.08

-1.24

V

-

-0.935

-1.07

V

-

120

-

MHz

DYNAMIC CHARACTERISTICS

SWITCHING TIMES

fT

-

74

-

pF

Cob

-

82

-

ns

ton

-

350

-

to

2/4

Switching Times

Note 1.Pulse Test : Pulse width < 300µs, Duty cycle ≤ 20%.

VCC=-10V,IC=-2A, IB1=IB2=-200mA

PZT159

11-Jul-07

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