HM52Y25165B-B6 datasheet(34/60 Pages) ELPIDA

Part #	HM52Y25165B-B6

Description	256M SDRAM 100 MHz 4-Mword 횞 16-bit 횞 4-bank /16-Mword 횞 4-bit 횞 4-bank

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Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

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HM52Y25165B/ HM52Y25405B-B6

Preliminary Data Sheet E0146H10

34

Write command to Precharge command interval (same bank): When the precharge command is executed

for the same bank as the write command that preceded it, the minimum interval between the two commands is

1 clock. However, if the burst write operation is unfinished, the input data must be masked by means of

DQM, DQMU/DQML for assurance of the clock defined by t

DPL.

WRITE to PRECHARGE Command Interval (same bank)

Burst Length = 4 (To stop write operation)

CLK

Command

Din

WRIT

PRE/PALL

tDPL

DQM,

DQMU/DQML

CLK

in A0

in A1

Command

Din

WRIT

PRE/PALL

DQM,

DQMU/DQML

tDPL

Burst Length = 4 (To write all data)

CLK

in A0

in A1

in A2

Command

Din

WRIT

PRE/PALL

in A3

DQM,

DQMU/DQML

tDPL

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HM52Y25165B-B6 Datasheet(PDF) 34 Page - Elpida Memory

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