HB54A5129F1U-B75B/10B

Data Sheet E0191H40 (Ver. 4.0)

11

Electrical Specifications

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Note

Voltage on any pin relative to VSS

VT

–1.0 to +4.6

V

1

Supply voltage relative to VSS

VCC, VCCQ

–1.0 to +4.6

V

1

Short circuit output current

IOUT

50

mA

Power dissipation

PT

18

W

Operating ambient temperature

TA

0 to +70

°C

2

Storage temperature

Tstg

–50 to +100

°C

Notes: 1. Respect to VSS.

2. DDR SDRAM component specification.

DC Operating Conditions (TA = 0 to +70°C) (DDR SDRAM Component Specification)

Parameter

Symbol

min.

Typ

max.

Unit

Notes

Supply voltage

VCC, VCCQ

2.3

2.5

2.7

V

1, 2

VSS

0

0

0

V

Input reference voltage

VREF

1.15

1.25

1.35

V

1

Termination voltage

VTT

VREF – 0.04

VREF

VREF + 0.04

V

1

DC Input high voltage

VIH

VREF + 0.18

—

VCCQ + 0.3

V

1, 3

DC Input low voltage

VIL

–0.3

—

VREF – 0.18

V

1, 4

DC Input signal voltage

VIN (DC)

–0.3

—

VCCQ + 0.3

V

5

DC differential input voltage

VSWING (DC) 0.36

—

VCCQ + 0.6

V

6

Notes: 1. All parameters are referred to VSS, when measured.

2. VCCQ must be lower than or equal to VCC.

3. VIH is allowed to exceed VCC up to 4.6V for the period shorter than or equal to 5ns.

4. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.

5. VIN (DC) specifies the allowable DC execution of each differential input.

6. VSWING (DC) specifies the input differential voltage required for switching.