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EDE1116AEBG Datasheet(PDF) 15 Page - Elpida Memory

Part # EDE1116AEBG
Description  1G bits DDR2 SDRAM
Download  78 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDE1116AEBG Datasheet(HTML) 15 Page - Elpida Memory

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EDE1108AEBG, EDE1116AEBG
Preliminary Data Sheet E1228E20 (Ver. 2.0)
15
-8E
-6E
Speed bin
DDR2-800 (5-5-5)
DDR2-667 (5-5-5)
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
Active to auto-precharge delay
tRAP
tRCD min.
tRCD min.
ns
Active bank A to active bank B command
period
(EDE1108AE)
tRRD
7.5
7.5
ns
(EDE1116AE)
tRRD
10
10
ns
Four active window period
(EDE1108AE)
tFAW
35
37.5
ns
(EDE1116AE)
tFAW
45
50
ns
/CAS to /CAS command delay
tCCD
2
2
nCK
Write recovery time
tWR
15
15
ns
Auto precharge write recovery + precharge
time
tDAL
WR
+ RU
(tRP/tCK(avg))
WR
+ RU
(tRP/tCK(avg))
nCK
1, 9
Internal write to read command delay
tWTR
7.5
7.5
ns
14
Internal read to precharge command delay
tRTP
7.5
7.5
ns
Exit self-refresh to a non-read command
tXSNR
tRFC
+ 10
tRFC + 10
ns
Exit self-refresh to a read command
tXSRD
200
200
nCK
Exit precharge power down to any non-read
command
tXP
2
2
nCK
Exit active power down to read command
tXARD
2
2
nCK
3
Exit active power down to read command
(slow exit/low power mode)
tXARDS
8
− AL
7
− AL
nCK
2, 3
CKE minimum pulse width (high and low
pulse width)
tCKE
3
3
nCK
Output impedance test driver delay
tOIT
0
12
0
12
ns
MRS command to ODT update delay
t
MOD
0
12
0
12
ns
Auto-refresh to active/auto-refresh
command time
tRFC
127.5
127.5
ns
Average periodic refresh interval
(0
°C ≤ TC ≤ +85°C)
tREFI
7.8
7.8
μs
(+85
°C < TC ≤ +95°C)
tREFI
3.9
3.9
μs
Minimum time clocks remains ON after CKE
asynchronously drops low
tDELAY
tIS
+ tCK(avg)
+ tIH
tIS
+ tCK(avg)
+ tIH
ns
Notes: 1. For each of the terms above, if not already an integer, round to the next higher integer.
2. AL: Additive Latency.
3. MRS A12 bit defines which active power down exit timing to be applied.
4. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the
VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the device under test.
DQS
/DQS
tDS
tDH
tDS
tDH
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VIL (DC)(max.)
VIL (AC)(max.)
VSS
VREF
CK
/CK
tIS
tIH
tIS
tIH
VDDQ
VIH (AC)(min.)
VIH (DC)(min.)
VIL (DC)(max.)
VIL (AC)(max.)
VSS
VREF
Input Waveform Timing 1 (tDS, tDH)
Input Waveform Timing 2 (tIS, tIH)


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