SEMICONDUCTOR

DIM200WKS12-A000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

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ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.

In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the

package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings

may affect device reliability.

Tcase = 25°C unless stated otherwise

Symbol

Parameter

Test Conditions

Max.

Units

Collector-emitter voltage

1200

V

Gate-emitter voltage

±20

V

Continuous collector current

200

A

Peak collector current

400

A

Max. transistor power dissipation

1390

W

I

Diode I

6.25

kA

Isolation voltage – per module

Commoned terminals to base plate. AC RMS, 1 min,50Hz

2500

V

THERMAL AND MECHANICAL RATINGS

Internal insulation material:

Baseplate material:

Copper

Creepage distance:

24mm

Clearance:

13mm

CTI (Critical Tracking Index):

175

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Thermal resistance – transistor

(per arm)

Continuous dissipation –

junction to case

-

-

90

°C/kW

Thermal resistance – diode (per arm)

Continuous dissipation –

junction to case

-

-

194

°C/kW

Thermal resistance – case to heatsink

(per module)

Mounting torque 5Nm

(with mounting grease)

-

-

15

°C/kW

Junction temperature

Transistor

-

-

150

°C

Diode

-

-

125

°C

Storage temperature range

-

-40

-

125

°C

-

Screw torque

Mounting – M6

3

-

5

Nm

Electrical connections – M6

2.5

-

5

Nm