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DIM200WKS12-A000 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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DIM200WKS12-A000 Datasheet(HTML) 2 Page - Dynex Semiconductor |
2 / 8 page SEMICONDUCTOR DIM200WKS12-A000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 2/8 www.dynexsemi.com ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage VGE = 0V 1200 V VGES Gate-emitter voltage ±20 V IC Continuous collector current Tcase = 80°C 200 A IC(PK) Peak collector current 1ms, Tcase =115°C 400 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 150°C 1390 W I 2t Diode I 2t value (IGBT arm) VR = 0, tP = 10ms, Tvj = 125°C 6.25 kA 2S Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min,50Hz 2500 V THERMAL AND MECHANICAL RATINGS Internal insulation material: Al2O3 Baseplate material: Copper Creepage distance: 24mm Clearance: 13mm CTI (Critical Tracking Index): 175 Symbol Parameter Test Conditions Min. Typ. Max. Units Rth(j-c) Thermal resistance – transistor (per arm) Continuous dissipation – junction to case - - 90 °C/kW Rth(j-c) Thermal resistance – diode (per arm) Continuous dissipation – junction to case - - 194 °C/kW Rth(c-h) Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 15 °C/kW Tj Junction temperature Transistor - - 150 °C Diode - - 125 °C Tstg Storage temperature range - -40 - 125 °C - Screw torque Mounting – M6 3 - 5 Nm Electrical connections – M6 2.5 - 5 Nm |
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