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DIM200WKS12-A000 Datasheet(PDF) 5 Page - Dynex Semiconductor |
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DIM200WKS12-A000 Datasheet(HTML) 5 Page - Dynex Semiconductor |
5 / 8 page SEMICONDUCTOR DIM200WKS12-A000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/8 www.dynexsemi.com 0 50 100 150 200 250 300 350 400 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) VGE = 10V VGE = 12V VGE = 15V VGE = 20V Common emitter Tcase = 25° C Vce is measured at power busbars and not the auxiliary terminals 0 50 100 150 200 250 300 350 400 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Collector-emitter voltage, Vce - (V) VGE = 10V VGE = 12V VGE = 15V VGE = 20V Common emitter Tcase = 125° C Vce is measured at power busbars and not the auxiliary terminals Fig.3 Typical output characteristics Fig.4 Typical output characteristics 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 Collector current, IC - (A) Eon Eoff Erec Tc = 125° C, Vcc = 600V, Rg = 4.7 Ohms 0 5 10 15 20 25 30 35 40 45 50 55 4 10 12 Gate resistance, Rg - (Ohms) 8 6 Eon Eoff Erec Tc = 125° C, Vcc = 600V, IC = 200A Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance |
Similar Part No. - DIM200WKS12-A000_09 |
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Similar Description - DIM200WKS12-A000_09 |
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