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DG808BC45 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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DG808BC45 Datasheet(HTML) 2 Page - Dynex Semiconductor |
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2 / 12 page  SEMICONDUCTOR DG808BC45 2/12 www.dynexsemi.com SURGE RATINGS Symbol Parameter Test Conditions Max. Units ITSM Surge (non repetitive) on-state current 10ms half sine. Tj = 125°C 16.0 kA I 2t I 2t for fusing 10ms half sine. Tj = 125°C 1.28 MA 2s diT/dt Critical rate of rise of on-state current VD = 3000V, IT = 3000A, Tj = 125°C, IFG > 40A, Rise time > 1.0 s 400 A/ s To 66% VDRM; RGK 1.5 , Tj = 125°C 100 V/ s dVD/dt Rate of rise of off-state voltage To 66% VDRM; VRG -2V, Tj = 125°C 1000 V/ s LS Peak stray inductance in snubber circuit IT = 3000A, VD = VDRM, Tj = 125 oC, dI GQ = 40A/us, CS = 4.0uF 200 nH GATE RATINGS Symbol Parameter Test Conditions Min. Max. Units VRGM Peak reverse gate voltage This value may exceeded during turn-off - 16 V IFGM Peak forward gate current - 100 A PFG(AV) Average forward gate power - 20 W PRGM Peak reverse gate power - 24 kW diGQ/dt Rate of rise of reverse gate current 30 60 A/ s tON(min) Minimum permissible on time 50 - s tOFF(min) Minimum permissible off time 100 - s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Double side cooled DC - 0.014 °C/W Anode DC - 0.0233 °C/W Rth(j-hs) Thermal resistance – junction to heatsink surface Single side cooled Cathode DC - 0.035 °C/W Rth(c-hs) Contact thermal resistance Clamping force 36.0kN With mounting compound Per contact - 0.0036 °C/W Tvj Virtual junction temperature On-state (conducting) -40 125 °C Top/Tstg Operating junction/storage temperature range -40 125 °C Fm Clamping force 28.0 44.0 kN |
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Similar Description - DG808BC45 |
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