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DCR1610F24 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DCR1610F24 Datasheet(HTML) 7 Page - Dynex Semiconductor |
7 / 10 page SEMICONDUCTOR DCR1610F28 7/10 www.dynexsemi.com 10 15 20 25 110 100 Number of cycles Conditions: Tcase = 125°C VR =0 Pulse width = 10ms 0 10 20 30 40 50 60 110100 Pulse width, tP - (ms) 0 2 4 6 I 2 t ITSM Conditions: Tcase= 125°C VR = 0 half-sine wave Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 20 40 60 Rate of decay of on-state current, di/dt - (A/us) Qsmax = 2060.337*(di/dt) 0.3349 Qsmin = 1306.826*(di/dt) 0.3971 Conditions : Tj = 125 oC, IF= 1000A tp = 1000us VRM = -100V 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 Rate of decay of on-state current, di/dt - (A/us) IRRmax = 41.043*(di/dt) 0.6867 IRRmin = 32.398*(di/dt) 0.7099 Conditions: Tj = 125 oC IF = 1000A tp = 1000us VRM = -100V Fig.12 Stored charge vs di/dt Fig.13 Reverse recovery current vs di/dt |
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