TPC8406-H datasheet(6/11 Pages) TOSHIBA

Part #	TPC8406-H

Description	Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel竊뢓-Channel Ultra-High-Speed U-MOSIII)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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6 / 11 page

TPC8406-H

2009-09-29

6

P-Channel

160

−40

0

40

80

120

−80

40

30

20

10

0

Ambient temperature Ta (°C)

RDS (ON) – Ta

50

ID = −1.7/−3.3/−6.5A

−1.7

−3.3

VGS = −4.5 V

−10 V

ID = −6.5 A

Common source

Pulse test

0

−0. 1

0.2

−10

−100

0.6

0.8

1.0

0.4

Drain-source voltage VDS (V)

IDR – VDS

−1

−10

−3

−1

VGS = 0 V

Common source

Ta

= 25°C

Pulse test

−4.5

1.2

10

−0.1

100

1000

10000

−1

−10

−100

Drain-source voltage VDS (V)

Capacitance – VDS

Ciss

Coss

Crss

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

0

−0.4

−1.2

−80

−40

0

40

80

120

160

−0.8

Ambient temperature Ta (°C)

Vth – Ta

−2.0

−1.6

Common source

VDS = −10 V

ID = −1 mA

Pulse test

2.0

1.2

0

50

100

150

1.6

200

0.8

0.4

Ambient temperature Ta (°C)

PD – Ta

(1)

(2)

(3)

(4)

Dynamic input/output

characteristics

Total gate charge Qg (nC)

−40

50

−20

−30

0

−16

−4

40

−12

0

20

30

10

−10

−8

−50

−20

VDD = −32 V

VGS

VDS

−16

−8

Common source

ID = −6.5 A

Ta

= 25°C

Pulse test

Device mounted on a glass-epoxy board (a) (Note 2a)

(1)Single-device operation (Note 3a)

(2)Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3)Single-device operation (Note 3a)

(4)Single-device value at dual operation (Note 3b)

ｔ＝

10S

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