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TPC8118 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPC8118 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPC8118 2009-09-29 5 80 100 80 160 120 VDS VGS −6 −12 0 40 60 −10 −20 −30 0 −10 −20 −30 20 VDD = −24V 0 VDD = −24V −6 −12 −80 −40 0 40 0 −2.0 −0.4 −1.2 −1.6 −0.8 Ciss Coss Crss 1000 10000 100 −0.1 −1 −10 −100 10 −10 −5 −3 VGS = 0 V −1 0 0.2 0.4 -0.6 0.8 1.2 −0.1 −1 −10 −100 1.0 VGS = −4 V ID = −13, −6.5, −3 A 0 10 20 30 −80 −40 0 40 80 120 160 VGS = −10 V ID = −13, −6.5, −3 A (1) (2) 0 0.4 0.8 1.2 1.6 0 40 80 160 120 2 RDS (ON) – Ta IDR – VDS Vth – Ta PD – Ta Common source Pulse test Common source Ta = 25°C Pulse test Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = −10 V ID = −1 mA Pulse test Common source ID = −13 A Ta = 25°C Pulse test Ambient temperature Ta (°C) Drain −source voltage VDS (V) Drain −source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Ambient temperature Ta (°C) Total gate charge Qg (nC) Dynamic input/output characteristics (1) Device mounted on a glass-epoxy board(a) (Note 2a) (2) Device mounted on a glass-epoxy board (b)(Note 2b) t = 10 s |
Similar Part No. - TPC8118 |
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Similar Description - TPC8118 |
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