SSM3J321T datasheet(2/6 Pages) TOSHIBA

Part #	SSM3J321T

Description	Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

SSM3J321T

2008-10-20

2

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Conditions

Min

Typ.

Max

Unit

V (BR) DSS ID = -1 mA, VGS = 0 V

-20

⎯

Drain-Source breakdown voltage

V (BR) DSX ID = -1 mA, VGS = +8 V

-12

⎯

V

Drain cut-off current

IDSS

VDS = -20 V, VGS = 0 V

⎯

-10

μA

Gate leakage current

IGSS

VGS = ±8 V, VDS = 0 V

⎯

±1

μA

Gate threshold voltage

Vth

VDS = -3 V, ID = -1 mA

-0.3

⎯

-1.0

V

Forward transfer admittance

⏐Yfs⏐

VDS = -3 V, ID = -3.0 A

(Note 3)

6.1

12.2

⎯

S

ID = -3.0 A, VGS = -4.5 V

(Note 3)

⎯

37

46

ID = -2.0 A, VGS = -2.5 V

(Note 3)

⎯

48

62

ID = -1.0 A, VGS = -1.8 V

(Note 3)

⎯

63

88

Drain–source ON-resistance

RDS (ON)

ID = -0.3 A, VGS = -1.5 V

(Note 3)

⎯

78

137

m

Ω

Input capacitance

Ciss

⎯

640

⎯

Output capacitance

Coss

⎯

140

⎯

Reverse transfer capacitance

Crss

VDS = -10 V, VGS = 0 V, f = 1 MHz

⎯

100

⎯

pF

Total Gate Charge

Qg

⎯

8.1

⎯

Gate-Source Charge

Qgs

⎯

6.4

⎯

Gate-Drain Charge

Qgd

VDS = −10 V, ID = −4.6 A

VGS = −4.5 V

⎯

1.7

⎯

nC

Turn-on time

ton

⎯

32

⎯

Switching time

Turn-off time

toff

VDD = -10 V, ID = -2.0 A,

VGS = 0 to -2.5 V, RG = 4.7 Ω

⎯

102

⎯

ns

Drain-Source forward voltage

VDSF

ID = 5.2 A, VGS = 0 V

(Note 3)

⎯

0.86

1.2

V

Note3: Pulse test

Switching Time Test Circuit

(a) Test Circuit

(b) VIN

Notice on Usage

Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for

this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower

voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

(c) VOUT

VDD = − 10 V

RG = 4.7 Ω

D.U.

≤ 1%

VIN: tr, tf < 5 ns

Common Source

Ta

= 25°C

0

−2.5V

10

μs

IN

VDD

OUT

RL

ton

90%

10%

−2.5 V

0 V

90%

10%

toff

tr

tf

VDS (ON)

VDD

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