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RFM03U3CT Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RFM03U3CT Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page RFM03U3CT 2009-08-24 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut-off current IDSS VDS = 10 V, VGS = 0 V ⎯ ⎯ 10 μA Gate-source leakage current IGSS VGS = 3 V ⎯ ⎯ 5 μA Threshold voltage Vth VDS = 3.6 V, ID = 0.1 mA 0.1 0.6 1.1 V Output power PO 2.3 3.0 ⎯ W Drain efficiency ηD 50 60 ⎯ % Power gain GP VDS = 3.6 V, Iidle = 500 mA (VGS = adjust), f = 520 MHz, Pi = 0.1 W, ZG = ZL = 50 Ω 13.6 14.8 ⎯ dB Load mismatch ⎯ VDS = 3.6 V, PO = 3 W (Pi = adjust), Iidle = 500 mA (VGS = adjust), f = 520 MHz, VSWR LOAD 20:1 all phase No degradation ⎯ Note 2: These characteristic values are measured using measurement tools specified by Toshiba. Output Power Test Fixture (Test Condition: f = 520 MHz, VDS = 3.6 V, Iidle = 500 mA, Pi = 0.1 W) Pi PO C1 C3 C7 ZG = 50 Ω C9 L1 R1 C12 C13 L2 VGS VDS C8 ZL = 50 Ω C1: 27 pF C2: 9 pF C3: 2 pF C4: 33 pF C5: 9 pF C6: 17 pF C7: 10000 pF C8: 10000 pF C9: 1000 pF C10: 10000 pF C11: 4.7 μF C12: 10000 pF C13: 4.7 μF L1: 27 μH L2: φ0.6 mm enamel wire, 5.8ID, 7T R1: 120 Ω C5 C6 C10 C11 C4 C2 |
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