RFM03U3CT datasheet(2/4 Pages) TOSHIBA

Part #	RFM03U3CT

Description	Field Effect Transistor Silicon N Channel MOS Type

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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RFM03U3CT

2009-08-24

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain cut-off current

IDSS

VDS = 10 V, VGS = 0 V

⎯

10

μA

Gate-source leakage current

IGSS

VGS = 3 V

⎯

5

μA

Threshold voltage

Vth

VDS = 3.6 V, ID = 0.1 mA

0.1

0.6

1.1

V

Output power

PO

2.3

3.0

⎯

W

Drain efficiency

ηD

50

60

⎯

%

Power gain

GP

VDS = 3.6 V,

Iidle = 500 mA (VGS = adjust),

f

= 520 MHz, Pi = 0.1 W,

ZG = ZL = 50 Ω

13.6

14.8

⎯

dB

Load mismatch

⎯

VDS = 3.6 V,

PO = 3 W (Pi = adjust),

Iidle = 500 mA (VGS = adjust),

f

= 520 MHz,

VSWR LOAD 20:1 all phase

No degradation

⎯

Note 2: These characteristic values are measured using measurement tools specified by Toshiba.

Output Power Test Fixture

(Test Condition: f

= 520 MHz, VDS = 3.6 V, Iidle = 500 mA, Pi = 0.1 W)

Pi

PO

C1

C3

C7

ZG = 50 Ω

C9

L1

R1

C12

C13

L2

VGS

VDS

C8

ZL = 50 Ω

C1: 27 pF

C2: 9 pF

C3: 2 pF

C4: 33 pF

C5: 9 pF

C6: 17 pF

C7: 10000 pF

C8: 10000 pF

C9: 1000 pF

C10: 10000 pF

C11: 4.7

μF

C12: 10000 pF

C13: 4.7

μF

L1: 27

μH

L2:

φ0.6 mm enamel wire, 5.8ID, 7T

R1: 120

Ω

C5

C6

C10

C11

C4

C2

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