DSF05S30U

2009-05-11

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

DSF05S30U

High Speed Switching Application

Characteristic

Symbol

Rating

Unit

Reverse voltage

30

V

Average forward current

500 ＊

mA

Surge current (10ms)

5

A

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

*: Mounted on a glass-epoxy circuit board of 20 × 20 mm,

pad dimensions of 4 × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.23

―

―

―

0.35

―

Forward voltage

―

―

0.40

0.45

V

Reverse current

―

―

5.3

50

μA

Total capacitance

―

⎯

120

⎯

pF

Marking

Handling Precaution

Schottky barrier diodes have reverse current characteristic compared to the other diodes.

There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.

Please take forward and reverse loss into consideration during design.

JEDEC

―

JEITA

―

TOSHIBA

1-1E1A

Weight: 4.5 mg (typ.)

Unit: mm

USC

FP